Project Work

Wide band gap based semiconductors open new paths to compact power applications by enabling higher frequencies and higher efficiencies whenever silicon based semiconductors reach their performance limits.

Based on these new semiconductors, seamless integration of assembly and packaging (including 3D) technologies are a prerequisite to leverage the full potential of “smart energy” applications. Because the societal need for most efficient power semiconductors, both, technically and cost-performance wise, the work on wide band gap semiconductors will be accompanied with intensive work on the current performance limits of power semiconductors based on 300 mm silicon substrates. Thus, the project “PowerBase” will improve the ability of the European industry to provide more efficient and more compact applications for energy generation, transformation and usage by early availability of enhanced power devices made in Europe.